The synthesis and the effect of Cu on optoelectronic qualities of ?-In2S3 as a window layer for CIGS thin film solar cells

• The use of thermal evaporation technology for the deposition In 2 S 3 and Cu-In thin films. ?-In phase with a tetragonal structure is found at room temperature. Various amounts copper element were used to improve effect doping on physical properties. effective promoted performance indium sulfide. this paper, vacuum technique was investigate doped (Cu) as window layer film solar cells. amount Cu source be 0–8 % atomic weight compared source. For various levels, characteristics films studied utilizing structural, morphological, optical characterization techniques, well dielectric testing. research included X-ray diffraction (XRD), force microscopy (AFM), scanning electron (SEM), Raman spectroscopy, energy-dispersive spectroscopy (EDS), Infrared analysis (FTIR), XPS, Ellipsometry UV-NIR spectroscopy. measurements demonstrated that real imaginary isolation constants over wavelength range successfully estimated Urbach energy (Eu) band gap energy. varied from 1.88 2.21 eV. decreases 2.10 1.93 eV direct transitions. Moreover, based measured (n k), employing Wemple-Didomenico model helped uncover Cauchy coefficients’, refractive index, dispersion oscillation energies. Therefore, results presented in paper show perovskite cells offers high-efficiency alternative field.